| PART |
Description |
Maker |
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD
SWITCH PB SPST-NO .4VA SOLDERLUG
CONNECTOR ACCESSORY
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns
256K-bit CMOS parallel EEPROM 200ns
256K-bit CMOS parallel EEPROM 300ns
256K-Bit CMOS PARALLEL E2PROM
128Kx8 EEPROM 128Kx8 EEPROM
32K X 8 EEPROM 3V, 200 ns, PQCC32
|
http://
CATALYST[Catalyst Semiconductor]
Intersil, Corp.
Epson (China) Co., Ltd.
STMicroelectronics N.V.
ON SEMICONDUCTOR
|
| MH16S64APHB-8 MH16S64APHB-6 MH16S64APHB-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
http://
|
| MH16S72DDFA-8 MH16S72DDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72BAMD-6 B99030 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S64BAMD-6 B99029 |
From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72VJB-6 B99037 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
